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| HSDL-4260 High-Power T-13/4 (5mm) AlGaAs Infrared (875nm) Lamp Datasheet Description The HSDL-4260 High Power Infrared emitter was designed for applications that require high power, low forward voltage and high speed. It utilizes Aluminum Galium Arsenide (AlGaAs) LED technology and is optimized for speed and efficiency at emission wavelengths of 875nm. The material used produces high radiant efficiency over a wide range of currents. The emitter is packaged in clear T-13/4 (5mm) package. 5.0 0.2 Features * High Power AlGaAs LED Technology * 875nm Wavelength * T-13/4 Package * Low Cost * Low Forward Voltage: 1.4V at 20mA * High Speed: 15ns Rise Times Applications * Industrial Infrared Equipments and applications * Portable Infrared Instruments * Consumer Electronics (Optical mouse, Infrared Remote Controllers etc) 8.7 0.2 1.14 0.2 * High Speed Infrared Communications (IR LANs, IR Modems, IR Dongles etc) 5.8 0.2 Part Number HSDL-4260 31.6 min. Lead Form Straight Shipping Option Bulk 0.7 max. 2.54 CATHODE FLAT 1.0 min. 0.50 0.1 Absolute Maximum Ratings at 25C Parameter Peak Forward Current Symbol IFPK Minimum - Maximum 500 Unit mA Reference Figure 3 Duty cycle = 20% Pulse Width = 100us [1] IR=100uA Forward Current Power Dissipation Reverse Voltage Storage Temperature LED Junction Temperature Lead Soldering Temperature Notes: Derate as shown in Figure 6. IFDC PDISS VR TS TJ 4 -40 100 230 100 110 260 for 5 sec mA mW V C C C Recommended Operating Conditions Parameter Operating Temperature Symbol TO Min -40 Max 85 Unit C Reference Electrical Characteristics at 25C Parameter Forward Voltage Forward Voltage Temperature Coefficient Series Resistance Diode Capacitance Thermal Resistance, Junction to Ambient Symbol VF V/T RS CO Rja Min. Typ. 1.4 1.7 -1.3 4 70 300 Max. 1.9 2.3 Unit V mV/C Ohms pF C/W Condition IFDC=20mA IFDC=100mA IFDC=100mA IFDC=100mA Vbias=0V, f=1MHz Reference Figure 2 Figure 4 Optical Characteristics at 25C Parameter Radiant On-Axis Intensity Radiant On-Axis Intensity Temperature Coefficient Viewing Angle Peak Wavelength Peak wavelength Temperature Coefficient Spectral Width Optical Rise and Fall Time Symbol IE IE/T 21/2 pk /T tr/tf Min. 150 - Typ. 200 -0.36 15 875 0.2 45 15 Max. - Unit mW/Sr %/C nm nm/C nm ns Condition IFDC=100mA IFDC=100mA Reference Figure 5 Figure 7 Figure 1 IFDC=100mA IFDC=20mA IFDC=500mA Duty Ratio = 20% Pulse Width=100ns Figure 1 2 Peak Wavelength Vs Relative Radiant Intensity 1.2 If - Forward Current - (mA) Relative Radiant Intensity 1.0 0.8 0.6 0.4 0.2 0 800 V-I Characteristics 100 4260Vf-If 10 1 820 840 860 880 900 Peak Wavelength - nm 920 940 0 0.5 1 1.5 2 Vf - Forward Voltage - (V) Figure 2. DC Forward Current vs. Forward Voltage Figure 1. Relative Radiant Intensity vs. Wavelength Peak Forward VoltagePeak Forward Current Forward Voltage Vs Temperature 1.8 1.7 Forward Voltage in Volts Ifpk - Peak Forward Current - (mA) 1000 1.6 1.5 1.4 1.3 1.2 1.1 I-Led=20mA I-Led=100mA -25 0 25 50 75 Temperature in Degrees 100 125 100 10 1 0 0.5 1 1.5 2 Vfpk - Peak Forward Voltage - (V) 2.5 1 Figure 3. Peak Forward Current vs. Forward Voltage Figure 4. Forward Voltage vs. Ambient Temperature I-Led Vs Relative Radiant Intensity at T=25C 1.2 Relative Radiant Intensity 1 0.8 0.6 0.4 0.2 0 0 20 40 60 I-Led - mA 80 100 120 Maximum Permisible DC forward current vs. ambient temperature 110 100 300 90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 TA- Ambient Temperature -C Figure 5. Relative Radiant Intensity vs. DC Forward Curren 3 IFDC MAX - Maximum DC Forward Current - mA Figure 6. DC Forward Current vs. Ambient Temperature Derated Based on TJMAX =110C Beam Intensity Vs Angle 1.2 Relative Radiant Intensity 1 0.8 0.6 0.4 0.2 0 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 Angle in degrees Figure 7. Radiant Intensity vs. Angular Displacement for HSDL-4260 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries. Data subject to change. Copyright (c) 2006 Avago Technologies Pte. All rights reserved. 5989-4468EN - January3, 2006 |
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